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NXP Semiconductors
ESD protection array
FEATURES
PINNING
Product data sheet
PESD5V2S18U
? Uni-directional ESD protection of
up to 18 lines
? Maximum peak reverse power:
P PP = 100 W at t p = 8/20 μ s
? Low clamping voltage:
V CL = 12 V max. at I ZSM = 10 A
? Low leakage current:
I R = 100 nA typ. at V RWM = 5.2 V
PIN
1 to 5
6 and 16
7 to 15
17 to 20
DESCRIPTION
cathode (k1 to k5)
common anode (a1; a2)
cathode (k6 to k14)
cathode (k15 to k18)
? IEC 61000-4-2, level 4 (ESD);
15 kV (air) and 8 kV (contact).
APPLICATIONS
? Printer parallel ports
? Computers and peripherals
? Communication systems.
handbook, 4 columns
1
20
1
2
3
4
5
6
20
19
18
17
16
15
7
14
DESCRIPTION
8
13
Monolithic ESD protection device
designed to protect up to
18 transmission or data lines from the
10
11
9
10
12
11
damage caused by electrostatic
MHC510
discharge (ESD) and surge pulses.
Fig.1 Simplified outline (SSOP20; SOT339-1) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
I PP
P PP
PARAMETER
non-repetitive peak reverse current
non-repetitive peak reverse power
CONDITIONS
t p = 8/20 μ s
t p = 8/20 μ s
?
?
MIN.
MAX.
10
100
UNIT
A
W
dissipation
T stg
T j
storage temperature
junction temperature
electrostatic discharge voltage
? 65
? 65
IEC 61000-4-2 (contact discharge) 30
HBM MIL-Std 883
10
+150
+150
?
?
° C
° C
kV
kV
ESD standards compliance
IEC 61000-4-2, level 4 (ESD)
HBM MIL-Std 883, class 3
2003 Apr 28
>15 kV (air); >8 kV (contact)
>4 kV
2
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